2N1197 Datasheet and Replacement

   Type Designator: 2N1197
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO5
      - BJT Cross-Reference Search