HUN5235 Datasheet, Equivalent, Cross Reference Search

Type Designator: HUN5235

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Maximum Collector Power Dissipation (Pc): 0.202 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-323

HUN5235 Datasheet (PDF)

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