BC638-16 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC636/DHigh Current TransistorsBC636PNP SiliconBC638COLLECTORBC64023BASE1EMITTER1MAXIMUM RATINGS23BC BC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC636; BC638; BC640PNP medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 07Philips Semiconductors Product specificationPNP medium power transistors BC636; BC638; BC640FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC6

March 2009BC638PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC637TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -60 VVCES Collector-Emitter Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Volt

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCE

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC636 / BC638 / BC640 TRANSISTOR (PNP)TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTORBC636 BC638 BC6403. BASE XXX XXX XXX1 1 1Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Co

SEMICONDUCTOR BC638TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC637.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBO -60 VCollector-Base Voltage_HJ 14.00 + 0.50K 0.55 MAXF FVCEO -60 VCollecto

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters)VEBO Emitter-

3CA638(BC638) PNP Ptot TC75 1.5 W ICM 1.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=10mA 60 V V(BR)EBO IEB=10A 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=4V 0.1 A IC=0.5A VCEsat 0.5 V IB=0.05A VCE=2V hFE 63~25