All Transistors. 2N6096 Datasheet

 

2N6096 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6096
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 175 MHz
   Collector Capacitance (Cc): 190 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: 211-01

 2N6096 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6096 Datasheet (PDF)

 ..1. Size:429K  1
2n6094 2n6095 2n6096 2n6097.pdf

2N6096
2N6096

 9.1. Size:24K  advanced-semi
2n6093.pdf

2N6096

2N6093NPN SILICON RF POWER TRANSISTORPACKAGE STYLE TO-217DESCRIPTION:The 2N6093 is a High Gain Linear RFPower Amplifier Used in Class A orClass B Applications With IndividualBallast Emitter Resistor and Built inTemperature Sensing Diode.MAXIMUM RATINGSIC 10 AVCE 35 VPDISS 83.3 W @ TC = 75 OC1 = Emitter & Diode Cathode TJ -65 OC to +200 OC2 = Collector3 = BaseTS

 9.2. Size:106K  jmnic
2n6098 2n6099 2n6100 2n6101.pdf

2N6096
2N6096

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N

 9.3. Size:119K  inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf

2N6096
2N6096

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA

 9.4. Size:188K  inchange semiconductor
2n6098.pdf

2N6096
2N6096

isc Silicon NPN Power Transistor 2N6098DESCRIPTIONDC Current Gain -: h = 20-80@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: 2N6089 , 2N609 , 2N6090 , 2N6091 , 2N6092 , 2N6093 , 2N6094 , 2N6095 , TIP36C , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N60C , 2N61 , 2N610 .

 

 
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