CD9581 Specs and Replacement
Type Designator: CD9581
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO-92
CD9581 Substitution
- BJT ⓘ Cross-Reference Search
CD9581 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CD9581 TO-92 CBE General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 7.0 V Collector Current IC 100 mA Power Dissipation... See More ⇒
Detailed specifications: CD9018D, CD9018E, CD9018F, CD9018G, CD9018H, CD9018I, CD9018J, CD909, 2SC2625, CD965, CD965P, CD965Q, CD965R, CDA1585BC, CDB550, CDB550B, CDB550C
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