CD965Q Specs and Replacement
Type Designator: CD965Q
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Package: TO-92
CD965Q Substitution
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CD965Q datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current ... See More ⇒
Detailed specifications: CD9018G, CD9018H, CD9018I, CD9018J, CD909, CD9581, CD965, CD965P, 9014, CD965R, CDA1585BC, CDB550, CDB550B, CDB550C, CF103, CIL187, CIL188
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