CD965Q Datasheet, Equivalent, Cross Reference Search
Type Designator: CD965Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Noise Figure, dB: -
Package: TO-92
CD965Q Transistor Equivalent Substitute - Cross-Reference Search
CD965Q Datasheet (PDF)
9.1. Size:223K cdil
cd965.pdf
cd965.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965TO-92Plastic PackageBCEFor Low Frequency Power AmplificationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 40 VVEBOEmitter Base Voltage 7 VICCollector Current
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
