CK100S Specs and Replacement
Type Designator: CK100S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-39
CK100S Transistor Equivalent Substitute - Cross-Reference Search
CK100S detailed specifications
cl100s ck100s.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR TRANSISTORS CL100S NPN CK100S PNP TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5.0 V Collector Current ICM 1.0 A Power Dissipation @ Ta=25 deg C PD 800 mW De... See More ⇒
cl100 ck100 a b.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CL100, A, B NPN CK100, A, B PNP TO-39 Metal Can Package Medium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 50 V VCBO Co... See More ⇒
3ck100.pdf
3CK100 PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 25 50 100 150 200 250 V V(BR)CEO ICE=5mA 25 50 100 150 200 250 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA... See More ⇒
Detailed specifications: CJF31C , CJF32C , CJF44H11 , CJF45H11 , CJF6107 , CJF6388 , CJF6668 , CK100B , 8050 , CL100A , CL100B , CL100S , CLB764 , CLD667 , CLD667A , CLD863 , CMBA847E .
Keywords - CK100S transistor specs
CK100S cross reference
CK100S equivalent finder
CK100S lookup
CK100S substitution
CK100S replacement
