All Transistors. CMBT8550D Datasheet

 

CMBT8550D Datasheet and Replacement


   Type Designator: CMBT8550D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-23
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CMBT8550D Datasheet (PDF)

 6.1. Size:276K  cdil
 cmbt8550 c d e.pdf pdf_icon

CMBT8550D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP)SOT-231 = BASE2 = EMITTER3 = COLLECTOR Formed SMD Package312ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage V

 8.1. Size:128K  cdil
 cmbt857.pdf pdf_icon

CMBT8550D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857PIN CONFIGURATION (PNP)SOT231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO

 8.2. Size:275K  cdil
 cmbt8598 99.pdf pdf_icon

CMBT8550D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT8598CMBT8599GENERAL PURPOSE TRANSISTORPNP transistorMarking PACKAGE OUTLINE DETAILSCMBT8598 = 2K ALL DIMENSIONS IN mmCMBT8599 = 2WPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT 8598 8599Collectorbas

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Keywords - CMBT8550D transistor datasheet

 CMBT8550D cross reference
 CMBT8550D equivalent finder
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