CN653 Specs and Replacement
Type Designator: CN653
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-92
CN653 Substitution
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CN653 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN652 / CN653 TO-92 Plastic Package C B E Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio Amplifier Complementary CP752 and CP753 ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL CN652 CN... See More ⇒
Detailed specifications: CN452, CN453, CN454, CN455, CN649, CN650, CN651, CN652, BD335, CN654, CN655, CN656, CN657, CN8050, CN8050C, CN8050D, CN8550
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