CP754 Specs and Replacement

Type Designator: CP754

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 125 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO-92

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CP754 datasheet

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CP754

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP754 / CP755 TO-92 Plastic Package C B E Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio Amplifier Complementary CN654 and CN655 ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL CP754 CP... See More ⇒

Detailed specifications: CP551, CP552, CP553, CP749, CP750, CP751, CP752, CP753, 2SD669A, CP755, CP88B, CPBT720, CPL636, CPL638, CPL640, CR13003, CSA1012

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