2N612 Specs and Replacement
Type Designator: 2N612
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
2N612 datasheet
0.3. Size:263K cdil
2n6121-26.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS 2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DI... See More ⇒
0.4. Size:104K jmnic
2n6129 2n6130 2n6131.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r... See More ⇒
0.5. Size:198K inchange semiconductor
2n6124.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) Complement to Type 2N6121 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
0.6. Size:196K inchange semiconductor
2n6122.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6122 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6125 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
0.7. Size:196K inchange semiconductor
2n6121.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6121 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) Complement to Type 2N6124 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
0.8. Size:198K inchange semiconductor
2n6126.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6126 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6123 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
0.9. Size:120K inchange semiconductor
2n6124 2n6125 2n6126.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and... See More ⇒
0.10. Size:120K inchange semiconductor
2n6121 2n6122 2n6123.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=... See More ⇒
0.11. Size:120K inchange semiconductor
2n6129 2n6130 2n6131.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ... See More ⇒
0.12. Size:194K inchange semiconductor
2n6129.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6129 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type 2N6132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
0.13. Size:197K inchange semiconductor
2n6123.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6123 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
0.14. Size:198K inchange semiconductor
2n6125.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6125 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6122 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
Detailed specifications: 2N6107, 2N6108, 2N6109, 2N611, 2N6110, 2N6111, 2N6112, 2N6116, S8050, 2N6121, 2N6122, 2N6123, 2N6124, 2N6125, 2N6126, 2N6127, 2N6128
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