2N1200 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 14 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO9
2N1200 Transistor Equivalent Substitute - Cross-Reference Search
2N1200 Datasheet (PDF)
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf
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HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at
hgtp2n120cn hgt1s2n120cn.pdf
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March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF
hgtp2n120cnd hgt1s2n120cnds.pdf
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HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers
hgtp2n120bnd hgt1s2n120bnds.pdf
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HGTP2N120BND, HGT1S2N120BNDSData Sheet January 2000 File Number 4698.212A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oCThe HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oCmembers o
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf
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HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at
mgv12n120drev0.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
mtv12n120d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
mgw12n120d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120D/DDesigner's Data SheetMGW12N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24712 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultraf
mtw12n120d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120D/DDesigner's Data SheetMGW12N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24712 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultraf
mgv12n120d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGV12N120D/DProduct Preview Data SheetMGV12N120DInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel Enhancement Mode Silicon GateIGBT & DIODE IN D3PAK12 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultrafast rectifier and uses an adva
mgw12n120.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120/DDesigner's Data SheetMGW12N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high12 A @ 90Cvoltageblocking
stf12n120k5 stfw12n120k5.pdf
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STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra
sth12n120k5-2 stp12n120k5 .pdf
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STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
stb12n120k5 stfw12n120k5 stp12n120k5 stw12n120k5.pdf
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STB12N120K5, STFW12N120K5STP12N120K5, STW12N120K5N-channel 1200 V, 0.58 , 12 A DPAK, TO-3PF, TO-220, TO-247Zener-protected SuperMESH 5 Power MOSFETPreliminary dataFeaturesTAB111RDS(on) Order codes VDSS ID PW2max.3312STB12N120K5 250 W1DPAKTO-3PFSTFW12N120K5 63 W1200 V
stw12n120k5 stwa12n120k5 sth12n120k5 stp12n120k5.pdf
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STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
sth12n120k5-2 stwa12n120k5.pdf
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STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
stf12n120k5.pdf
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STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra
sgd02n120.pdf
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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
skp02n120.pdf
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SKP02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeAllowed number of short circuits: 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter- SMPS NPT-Technology offers:PG-TO-220-3-1- very tig
sgb02n120.pdf
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SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi
sgb02n120 .pdf
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SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi
sgw02n120 .pdf
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SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according
skb02n120.pdf
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SKB02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeAllowed number of short circuits: 1s. lower Eoff compared to previous generation Short circuit withstand time 10 sGE Designed for frequency inverters for washing machines,fans, pumps and vacuum cleaners NPT-Technology o
skb02n120g.pdf
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SKB02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology offers:
sgp02n120.pdf
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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgp02n120 sgd02n120 sgi02n120g.pdf
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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgi02n120.pdf
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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
sgw02n120.pdf
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SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according
sgp02n120 sgd02n120 sgi02n120.pdf
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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
mmix1y82n120c3h1.pdf
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Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y82N120C3H1GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab)tfi(typ) = 93nsHigh-Speed IGBTCfor 20-50 kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V
ixgt32n120a3.pdf
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GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75
ixyn82n120c3h1.pdf
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1200V XPTTM IGBT VCES = 1200VIXYN82N120C3H1GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continu
ixgx82n120b3.pdf
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Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120B3IC110 = 82AIGBTsIXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTsfor 3 - 20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC(TAB)EEVGES Continuous 20 VVGEM Transient
ixgn82n120c3h1.pdf
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Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN82N120C3H1IC110 = 58AIGBT w/ DiodeVCE(sat) 3.9VHigh-Speed PT IGBT for20-50 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VE
ixgh32n120a3.pdf
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GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75
ixyb82n120c3h1.pdf
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1200V XPTTM IGBT VCES = 1200VIXYB82N120C3H1GenX3TM w/ Diode IC110 = 82A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingPLUS264TMSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VCEVCGR TJ = 25C to 150C, RGE = 1M 1200 V TabVGES Continuous 20 VVG
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf
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GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgx82n120a3.pdf
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Preliminary Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120A3IC110 = 82AIGBTsIXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Transient 3
ixty02n120p ixtp02n120p.pdf
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Advance Technical InformationPolarTM VDSS = 1200VIXTP02N120PID25 = 0.2APower MOSFETIXTY02N120P RDS(on) 75 N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsGDD (Tab)SVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VTO-252 (IXTY)VGSS Continuous 20 VVGSM
ixgh12n120a3.pdf
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GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgk82n120b3.pdf
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Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120B3IC110 = 82AIGBTsIXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTsfor 3 - 20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC(TAB)EEVGES Continuous 20 VVGEM Transient
ixyn82n120c3.pdf
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N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyh82n120c3.pdf
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1200V XPTTM IGBT VCES = 1200VIXYH82N120C3GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient
ixth12n120.pdf
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VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit
ixgp12n120a2.pdf
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IXGA 12N120A2VCES = 1200 VIGBTIXGP 12N120A2IC25 = 24 AOptimized forVCE(sat) = 3.0 Vswitching up to 5KHzPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1
ixga12n120a2 ixgp12n120a2.pdf
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IXGA 12N120A2VCES = 1200 VIGBTIXGP 12N120A2IC25 = 24 AOptimized forVCE(sat) = 3.0 Vswitching up to 5KHzPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1
ixgn82n120b3h1.pdf
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Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN82N120B3H1IC110 = 64AIGBT w/ DiodeVCE(sat) 3.2VHigh-Speed Low-Vsat PT IGBTfor 3-20 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient
ixgp12n120a3.pdf
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GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgk82n120a3.pdf
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Preliminary Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120A3IC110 = 82AIGBTsIXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Transient 3
ixgy2n120.pdf
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Preliminary Data SheetVCES IC90 VCE(SAT)High Voltage IGBTIXGY 2N1201200 V 2.0 A 3 VTO-252 AA (IXGY)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 5 AE = Emitter TAB = CollectorIC90 TC = 90C 2 AICM TC
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf
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IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1
kgt12n120ndh.pdf
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SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
sl42n120a.pdf
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SL42N120ASiC M osfet: : Drain Pin 2 Gate Pin 1: SourcePin 3 UPS DC/DC SL42N120A TO-247-3 T =25C
wmj12n120d1 wmx12n120d1.pdf
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WMJ12N120D1 WMX12N120D1 1200V 12A 1.25 N-ch Power MOSFET Description TO-247 TO-3PF TAB WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G D S S Features Typ.R =1.25@V
Datasheet: 2N1194 , 2N1195 , 2N1196 , 2N1197 , 2N1198 , 2N1199 , 2N1199A , 2N120 , 9014 , 2N1201 , 2N1202 , 2N1203 , 2N1204 , 2N1204A , 2N1205 , 2N1206 , 2N1207 .
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