CSB1116Y Specs and Replacement

Type Designator: CSB1116Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: TO-92

 CSB1116Y Substitution

- BJT ⓘ Cross-Reference Search

 

CSB1116Y datasheet

 7.1. Size:263K  cdil

 csb1116.pdf pdf_icon

CSB1116Y

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116 CSB1116A TO-92 BCE B C E Audio Frequency Power Amplifier And Medium Speed Switching Complementary CSD1616/1616A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL CSB1116 CSB1116A UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitt... See More ⇒

Detailed specifications: CSAL928A, CSB1058, CSB1058A, CSB1058B, CSB1116, CSB1116A, CSB1116G, CSB1116L, 2N2222, CSB1181, CSB1182, CSB1184, CSB1272, CSB1370, CSB1370D, CSB1370E, CSB1370F

Keywords - CSB1116Y pdf specs

 CSB1116Y cross reference

 CSB1116Y equivalent finder

 CSB1116Y pdf lookup

 CSB1116Y substitution

 CSB1116Y replacement