CSB621AQ Specs and Replacement
Type Designator: CSB621AQ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO-92
CSB621AQ Substitution
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CSB621AQ datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSB621, CSB621A TO-92 Plastic Package B C E AF Output Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL CSB621 CSB621A UNITS VCEO Collector Emitter Voltage 25 50 V VCBO Collector Base Voltage 30 60 V VEBO Emitter Base Voltage 5.0 V I... See More ⇒
Detailed specifications: CSB546Y, CSB564A, CSB564AG, CSB564AO, CSB564AY, CSB612, CSB621, CSB621A, S8550, CSB621AS, CSB621Q, CSB621R, CSB621S, CSB631, CSB631D, CSB631E, CSB631F
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