2N6136 Specs and Replacement
Type Designator: 2N6136
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
- BJT ⓘ Cross-Reference Search
2N6136 datasheet
9.1. Size:104K jmnic
2n6129 2n6130 2n6131.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r... See More ⇒
9.2. Size:104K jmnic
2n6132 2n6133 2n6134.pdf 

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ra... See More ⇒
9.4. Size:194K inchange semiconductor
2n6130.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6130 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
9.5. Size:194K inchange semiconductor
2n6131.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6131 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
9.6. Size:120K inchange semiconductor
2n6129 2n6130 2n6131.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ... See More ⇒
9.7. Size:195K inchange semiconductor
2n6132.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6132 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Complement to Type 2N6129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
9.8. Size:119K inchange semiconductor
2n6132 2n6133 2n6134.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o... See More ⇒
9.9. Size:195K inchange semiconductor
2n6133.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6133 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
9.10. Size:196K inchange semiconductor
2n6134.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6134 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
Detailed specifications: 2N6129
, 2N613
, 2N6130
, 2N6131
, 2N6132
, 2N6133
, 2N6134
, 2N6135
, 2SD1047
, 2N614
, 2N615
, 2N616
, 2N6166
, 2N617
, 2N6175
, 2N6176
, 2N6177
.
History: 2SC486B
| 2SC484
| 2SC482G
| ZTX601A
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