2N6136 Datasheet and Replacement
Type Designator: 2N6136
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
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2N6136 Datasheet (PDF)
2n6129 2n6130 2n6131.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r
2n6132 2n6133 2n6134.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra
2n6130.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
Datasheet: 2N6129 , 2N613 , 2N6130 , 2N6131 , 2N6132 , 2N6133 , 2N6134 , 2N6135 , S9014 , 2N614 , 2N615 , 2N616 , 2N6166 , 2N617 , 2N6175 , 2N6176 , 2N6177 .
History: D29E2 | BDS28A | KTB2510 | BD951F | 2SA3802 | 2SC5207A | 2N1637
Keywords - 2N6136 transistor datasheet
2N6136 cross reference
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History: D29E2 | BDS28A | KTB2510 | BD951F | 2SA3802 | 2SC5207A | 2N1637



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