All Transistors. CSD669AB Datasheet

 

CSD669AB Datasheet, Equivalent, Cross Reference Search


   Type Designator: CSD669AB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-126

 CSD669AB Transistor Equivalent Substitute - Cross-Reference Search

   

CSD669AB Datasheet (PDF)

 8.1. Size:87K  cdil
 csb649 a csd669-a.pdf

CSD669AB CSD669AB

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package CSB649, CSB649ACSD669, CSD669ACSB649, 649A PNP PLASTIC POWER TRANSISTORSCSD669, 669A NPN PLASTIC POWER TRANSISTORSLow frequency Power AmplifierPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSABSOLUTE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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