CSC815G Specs and Replacement
Type Designator: CSC815G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO-92
CSC815G Substitution
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CSC815G datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSC815 TO-92 CBE Low Frequency Amplifier And High Frequency Oscillator. Complementary CSA539 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V ... See More ⇒
Detailed specifications: CSC536H, CSC536K, CSC536KD, CSC536KE, CSC536KF, CSC536KG, CSC536KH, CSC815, 2SA1015, CSC815Q, CSC815R, CSC815Y, CSC945, CSC945K, CSC945P, CSC945Q, CSC945R
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