CSC815Q Specs and Replacement

Type Designator: CSC815Q

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO-92

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CSC815Q datasheet

 8.1. Size:179K  cdil

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CSC815Q

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSC815 TO-92 CBE Low Frequency Amplifier And High Frequency Oscillator. Complementary CSA539 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V ... See More ⇒

Detailed specifications: CSC536K, CSC536KD, CSC536KE, CSC536KF, CSC536KG, CSC536KH, CSC815, CSC815G, BC556, CSC815R, CSC815Y, CSC945, CSC945K, CSC945P, CSC945Q, CSC945R, CSCL2328A

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