All Transistors. C5198 Datasheet

 

C5198 Datasheet, Equivalent, Cross Reference Search

Type Designator: C5198

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 220 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO-3PN

C5198 Transistor Equivalent Substitute - Cross-Reference Search

 

C5198 Datasheet (PDF)

0.1. 2sc5198.pdf Size:148K _toshiba

C5198
C5198

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em

0.2. a1941 c5198.pdf Size:335K _cdil

C5198
C5198

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 (9TW) PNP C5198 (9TW) NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMBOL UNIT Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Bas

 0.3. 2sc5198.pdf Size:218K _inchange_semiconductor

C5198
C5198

isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : V = 2.0V(Min) @I = 7A CE(sat) C ·Good Linearity of h FE ·Complement to Type 2SA1941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage appli

0.4. 2sc5198b.pdf Size:208K _nell

C5198
C5198

RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45±0.1 5.45±0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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