2N6199 Specs and Replacement
Type Designator: 2N6199
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: X28-1
2N6199 Substitution
- BJT ⓘ Cross-Reference Search
2N6199 datasheet
2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications C up to 250 MHz. B E E FEATURES C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions D H J Omnigold Metallization System G #8-32 UNC-2A F E MA... See More ⇒
2n6190 2n6191 2n6192 2n6193.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N6193LCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0... See More ⇒
2N6193ALCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (... See More ⇒
Detailed specifications: 2N6192, 2N6193, 2N6193A, 2N6194, 2N6195, 2N6196, 2N6197, 2N6198, D880, 2N61A, 2N61B, 2N61C, 2N62, 2N620, 2N6200, 2N6201, 2N6202
Keywords - 2N6199 pdf specs
2N6199 cross reference
2N6199 equivalent finder
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