CJD115 Datasheet, Equivalent, Cross Reference Search
Type Designator: CJD115
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252 DPAK
CJD115 Transistor Equivalent Substitute - Cross-Reference Search
CJD115 Datasheet (PDF)
9.1. Size:99K cdil
cjd110 5.pdf
cjd110 5.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCJD110 NPNCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORSCJD115 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching such as Output or Driver stages in Applications such as SwitchingRegulators, Converters and Power AmplifiersABSOLUTE MAXIMUM RATINGS DESCRIPT
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
