CJD176 Datasheet, Equivalent, Cross Reference Search
Type Designator: CJD176
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-252 DPAK
CJD176 Transistor Equivalent Substitute - Cross-Reference Search
CJD176 Datasheet (PDF)
9.1. Size:277K cdil
cjd175-cjd180.pdf
cjd175-cjd180.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175CJD178CJD177CJD180CJD179NPN PNPDPAK (TO-252)Plastic PackageIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNITCJD176 CJD178 CJD180Collector -Emitter V
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
