CJD177 Datasheet. Specs and Replacement
Type Designator: CJD177
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
CJD177 Substitution
- BJT ⓘ Cross-Reference Search
CJD177 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175 CJD178 CJD177 CJD180 CJD179 NPN PNP DPAK (TO-252) Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNIT CJD176 CJD178 CJD180 Collector -Emitter V... See More ⇒
Detailed specifications: CFD2374Q, CFD2375, CFD2375P, CFD2375Q, CJD110, CJD115, CJD175, CJD176, 2SC4793, CJD178, CJD179, CJD180, CJD204R, CJD3439, CJD81, CJD86, CJE13007
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