CJD179 Datasheet, Equivalent, Cross Reference Search
Type Designator: CJD179
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-252 DPAK
CJD179 Transistor Equivalent Substitute - Cross-Reference Search
CJD179 Datasheet (PDF)
9.1. Size:277K cdil
cjd175-cjd180.pdf
cjd175-cjd180.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175CJD178CJD177CJD180CJD179NPN PNPDPAK (TO-252)Plastic PackageIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNITCJD176 CJD178 CJD180Collector -Emitter V
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
