CJD179 Datasheet and Replacement
Type Designator: CJD179
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-252 DPAK
CJD179 Substitution
CJD179 Datasheet (PDF)
cjd175-cjd180.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175CJD178CJD177CJD180CJD179NPN PNPDPAK (TO-252)Plastic PackageIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNITCJD176 CJD178 CJD180Collector -Emitter V
Datasheet: CFD2375P , CFD2375Q , CJD110 , CJD115 , CJD175 , CJD176 , CJD177 , CJD178 , 2N2222A , CJD180 , CJD204R , CJD3439 , CJD81 , CJD86 , CJE13007 , CJF100 , CJF101 .
History: SBC807-25WT1G | AM0912-150
Keywords - CJD179 transistor datasheet
CJD179 cross reference
CJD179 equivalent finder
CJD179 lookup
CJD179 substitution
CJD179 replacement
History: SBC807-25WT1G | AM0912-150



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