All Transistors. CSB1065N Datasheet

 

CSB1065N Datasheet and Replacement


   Type Designator: CSB1065N
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: TO-126
 

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CSB1065N Datasheet (PDF)

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CSB1065N

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP PLASTIC POWER TRANSISTORCSB1065TO126 Plastic PackageECBComplementary CSD1506Low Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >60 VCollector Emitter Voltage (open b

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CSB1065N

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1058TO-92BCEBCELow Frequency Power Amplifier.Complementary CSD1489ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 20 VCollector Emitter Voltage BVCEO 16 VEmitter B

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KT3130A9 | 2SA1832O | NSBC123TPDP6 | 2SD2625Z9 | 2SA1827 | CTLT8099-M322S | C106

Keywords - CSB1065N transistor datasheet

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