CSB507C Specs and Replacement
Type Designator: CSB507C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-220
CSB507C Substitution
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CSB507C datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507, CSD313 CSB507 PNP PLASTIC POWER TRANSISTOR CSD313 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83... See More ⇒
Detailed specifications: CSB1086AP, CSB1086AQ, CSB1086B, CSB1086N, CSB1086P, CSB1086Q, CSB1086R, CSB507, D882, CSB507D, CSB507E, CSB507F, CSB624, CSB817F, CSB817OF, CSB817YF, CSB834
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