2N621 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N621
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2N621 Transistor Equivalent Substitute - Cross-Reference Search
2N621 Datasheet (PDF)
2n6216 2n6217.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2n6211.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6211DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -225V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchi
2n6216 2n6217.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
2n6217.pdf
isc Silicon NPN Power Transistor 2N6217DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6216.pdf
isc Silicon NPN Power Transistor 2N6216DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6212.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6212DESCRIPTIONWith TO-3 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitionAlternator regulatorMotor controlsABSOLUTE MA
2n6213.pdf
isc Silicon PNP Power Transistor 2N6213DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchingregulators, converte
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
