2N6214 Specs and Replacement
Type Designator: 2N6214
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO66
2N6214 Substitution
- BJT ⓘ Cross-Reference Search
2N6214 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6211 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = -225V(Min) CEO(SUS) Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switchi... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE... See More ⇒
Detailed specifications: 2N6205, 2N6206, 2N6207, 2N6208, 2N621, 2N6211, 2N6212, 2N6213, 2N2907, 2N6215, 2N6216, 2N6217, 2N6218, 2N6219, 2N622, 2N6220, 2N6221
Keywords - 2N6214 pdf specs
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History: 2N6211 | 2SA919 | 2N6213 | 2N6208
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