CSC2712BL Datasheet, Equivalent, Cross Reference Search
Type Designator: CSC2712BL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: SOT-23
CSC2712BL Transistor Equivalent Substitute - Cross-Reference Search
CSC2712BL Datasheet (PDF)
csc2712.pdf
IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerSOT-23 Formed SMD Package CSC2712SILICON PLANAR EPITAXIAL TRANSISTORN-P-N transistorMarkingPACKAGE OUTLINE DETAILSCSC2712Y=1EALL DIMENSIONS IN mmCSC2712GR(G)=1FCSC2712BL(L)=1GPin configuration1 = BASE2 = EMITTER3 = COLLE
csc2713.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312MARKINGCSC2713 =13CSC2713G =13GCSC2713L =13LComplementary CSA1163Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING
csc2786 mf lf kf.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786TO-92Plastic PackageBCEFor use in FM RF AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 4 VIBBase Current 20
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .