BU3150 Specs and Replacement
Type Designator: BU3150
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO-220A
BU3150 Substitution
- BJT ⓘ Cross-Reference Search
BU3150 datasheet
TEL 0755-29799516 FAX 0755-29799515 Shenzhen Jingdao Electronic Co.,Ltd. Http //www.jdsemi.cn BU3150 NPN ... See More ⇒
R BU3150 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hig... See More ⇒
R BU3150T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi... See More ⇒
Detailed specifications: 2SC5011, 2SC5419, 2SC5446, 2SC5763, 2SC5803, 2SD2624, D209L, FJAF6916, TIP32C, 2SC5793, 2SB1685, 2SB1686, 2SB1687, 2SC5586, 2SC5830, 2SC5924, STD03N
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