2SC1070B Specs and Replacement
Type Designator: 2SC1070B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 750 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
2SC1070B Substitution
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2SC1070B datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1079 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO... See More ⇒
Detailed specifications: 2SB1687, 2SC5586, 2SC5830, 2SC5924, STD03N, STD03P, 2SC4458, FJX945, 2SC5200, 2SC1545M, 2SC1741AS, 2SC3359S, 2SC2058S, 2SC2501, 2SC2585, 2SC2750, 2SC2824
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