2SC4643 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4643
SMD Transistor Code: DR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 9 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: UPAK
2SC4643 Transistor Equivalent Substitute - Cross-Reference Search
2SC4643 Datasheet (PDF)
2sc4643.pdf
2SC4643Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4643Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissip
2sc4643.pdf
SMD Type TransistorsNPN Transistors2SC4643SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO
2sc4644.pdf
Ordering number:EN3520PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA1784/2SC4644High Voltage Driver ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage (VCEO 400V).2064 Excellent linearity of hFE.[2SA17814/2SC4644]E : EmitterC : CollectorB : Base( ) : 2SA1784SANYO : N
2sc4646.pdf
Ordering number:EN3512B2SA1786 : PNP Epitaxial Planar Silicon Transistor2SC4646 : NPN Triple Diffused Planar Silicon Transistor2SA1786/2SC4646High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1786/2SC4646]E : EmitterC : CollectorB : Base( ) : 2SA1786SANYO : NMPSpe
2sc4645.pdf
Ordering number:EN3511A2SA1785 : PNP Epitaxial Planar Silicon Transistor2SC4645 : NPN Triple Diffused Planar Silicon Transistor2SA1785/2SC4645High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=1A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1785/2SC4645]E : EmitterC : CollectorB : Base( ) : 2SA1785SANYO : NMPSpe
2sc4647.pdf
2SC4647Silicon NPN Triple DiffusedApplicationHigh voltage amplifierFeatures High break down voltageV(BR)CEO = 300 V min.OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC4647Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BDX78
