All Transistors. 2SC4709 Datasheet

 

2SC4709 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4709

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.75 W

Maximum Collector-Base Voltage |Vcb|: 2100 V

Maximum Collector-Emitter Voltage |Vce|: 2100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 1.3 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-220AB_SC-46

2SC4709 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4709 Datasheet (PDF)

1.1. 2sc4709.pdf Size:99K _sanyo

2SC4709
2SC4709

Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (Cob typ=1.3pF). 2010C Wide ASO. [2SC4709] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector

4.1. 2sc4707.pdf Size:172K _toshiba

2SC4709
2SC4709



4.2. 2sc4705.pdf Size:102K _sanyo

2SC4709
2SC4709

Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications Package Dimensions Low-frequency general-purpose amplifier, drivers, unit:mm muting circuits. 2038A [2SC4705] Features 4.5 1.5 1.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat)?

 4.3. r07ds0275ej 2sc4702-1.pdf Size:99K _renesas

2SC4709
2SC4709

Preliminary Datasheet R07DS0275EJ0400 2SC4702 (Previous: REJ03G0729-0300) Rev.4.00 Silicon NPN Epitaxial Mar 28, 2011 Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Note: Marking is XV. Absolut

4.4. 2sc4703.pdf Size:47K _nec

2SC4709
2SC4709

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mou

 4.5. 2sc4702.pdf Size:31K _hitachi

2SC4709
2SC4709

2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Coll

4.6. 2sc4706.pdf Size:190K _jmnic

2SC4709
2SC4709

JMnic Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBO

4.7. 2sc4706.pdf Size:23K _sanken-ele

2SC4709

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit 0.2 4.8 0.4 15.6 VCBO 900 V ICBO VCB=800V 100max A 0.1 9.6 2.0 VCEO 600 V IEBO VEB

4.8. 2sc4706.pdf Size:153K _inchange_semiconductor

2SC4709
2SC4709

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage switching transistor APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(

4.9. 2sc4702.pdf Size:560K _kexin

2SC4709
2SC4709

SMD Type Transistors NPN Transistors 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle

4.10. 2sc4705.pdf Size:1102K _kexin

2SC4709
2SC4709

SMD Type Transistors NPN Transistors 2SC4705 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.2A ● Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

4.11. 2sc4703.pdf Size:1055K _kexin

2SC4709
2SC4709

SMD Type Transistors NPN Transistors 2SC4703 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.15A ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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