All Transistors. 2N6231 Datasheet

 

2N6231 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6231
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 2N6231 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6231 Datasheet (PDF)

 ..1. Size:110K  jmnic
2n6229 2n6230 2n6231.pdf

2N6231
2N6231

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol

 ..2. Size:117K  inchange semiconductor
2n6229 2n6230 2n6231.pdf

2N6231
2N6231

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3

 9.1. Size:96K  motorola
2n6237 2n6238 2n6239 2n6240 2n6241.pdf

2N6231
2N6231

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6237/D2N6237thruSilicon Controlled Rectifiers2N6241Reverse Blocking Triode Thyristors. . . PNPN devices designed for high volume consumer applications such asSCRstemperature, light, and speed control; process and remote control, and warning4 AMPERES RMSsystems where reliability of operation is important.50 t

 9.2. Size:11K  semelab
2n6230.pdf

2N6231

2N6230Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:10K  semelab
2n6235x.pdf

2N6231

2N6235XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

 9.4. Size:11K  semelab
2n6235.pdf

2N6231

2N6235Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.5. Size:11K  semelab
2n6234.pdf

2N6231

2N6234Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.6. Size:139K  microsemi
2n6232.pdf

2N6231
2N6231

TECHNICAL DATASILICON NPN TRANSISTOR Devices 10 AMP 2N6232 100 V FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 100 VdcVCEO Collector-Base Voltage 140 VdcVCBO Emitter-Base Voltage 7.0 VdcVEBO Collector Current Peak (1) 10 AdcIC Base Current Continuous IB AdcTotal Power Dissipation @

 9.7. Size:187K  inchange semiconductor
2n6235.pdf

2N6231
2N6231

isc Silicon NPN Power Transistor 2N6235DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min)CEO(SUS)DC Current Gain-: h = 25-125@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V )= 0.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f for high-voltage medium pow

Datasheet: 2N6224 , 2N6225 , 2N6226 , 2N6227 , 2N6228 , 2N6229 , 2N623 , 2N6230 , C1815 , 2N6232 , 2N6232-4 , 2N6233 , 2N6234 , 2N6235 , 2N6235R , 2N624 , 2N6246 .

 

 
Back to Top