2SC4783 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4783
SMD Transistor Code: L4_L5_L6_L7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
2SC4783 Transistor Equivalent Substitute - Cross-Reference Search
2SC4783 Datasheet (PDF)
2sc4783.pdf
DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1
2sc4787.pdf
Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)
2sc4787 e.pdf
Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)
2sc4782 e.pdf
Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max
2sc4782.pdf
Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max
2sc4789.pdf
2SC4789Silicon NPN Triple DiffusedApplication TO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 25 A Suitable for large size CRT Display1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit
2sc4784.pdf
2SC4784Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4784Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VColle
2sc4782.pdf
SMD Type TransistorsNPN Transistors2SC4782SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll
2sc4789.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC4789DESCRIPTIONSilicon NPN triple diffusedHigh Switching SpeedHigh Breakdown VoltageHigh speed switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deffection outputSuitable for large size CRT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
