2SC4839 Datasheet and Replacement

2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C... See More ⇒

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Ordering number EN4134 NPN Epitaxial Planar Silicon Transistor 2SC4836 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SC4836] 4.5 Large allowable collector dissipation. 1.9 2.6 10.5 1.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usa... See More ⇒

Ordering number EN4135 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity... See More ⇒

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0... See More ⇒

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0... See More ⇒

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4833 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-... See More ⇒

SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4834 Case ITO-220 Unit mm (TP8V40FS) 8A NPN RATINGS ... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4830 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4833 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXI... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4834 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXI... See More ⇒