2SC4844 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4844
SMD Transistor Code: MO
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 0.55 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: 2-2K1A
2SC4844 Transistor Equivalent Substitute - Cross-Reference Search
2SC4844 Datasheet (PDF)
1.1. 2sc4844.pdf 
Size:469K _toshiba
2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
4.1. 2sc4841.pdf Size:465K _toshiba
2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 8.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
4.2. 2sc4842.pdf Size:468K _toshiba
2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
4.3. 2sc4840.pdf Size:467K _toshiba
2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
4.4. 2sc4843.pdf Size:468K _toshiba
2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 15.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5
4.5. 2sc4849.pdf Size:39K _rohm
2SC4849 Transistors Transistors 2SC5147 (94L-712-C342) (96-736-C358) 302
4.6. 2sc4848.pdf Size:235K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMU
4.7. 2sc4849.pdf Size:71K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4849 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) S
Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .
