2N6251 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6251
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
2N6251 Transistor Equivalent Substitute - Cross-Reference Search
2N6251 Datasheet (PDF)
2n6249 2n6250 2n6251.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n6249 2n6250 2n6251.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage Low saturation voltage Fast switching capability APPLICATIONS For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em
2n6249 2n6250 2n6251.pdf
NPN High Power Silicon Transistors2N6249, 2N6250, 2N6251Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6249 2N6250 2N6251 UnitsCollector - Emitter Voltage VCEO 200 275 350 VdcCollector - Base Voltage VCBO300 375 450 VdcEmitter - Base Voltage VEBO 6.0 VdcCollector Current IC 10 AdcBase Curr
2n6249 2n6250 2n6251.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage,high speed Low collector saturation voltage APPLICATIONS High voltage inverters Switching regulators Line operated amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified out
2n6251.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6251 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High Power Dissipation APPLICATIONS Designed for high voltage, high current ,high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V
2n6251re.pdf
Order this documentMOTOROLAby 2N6251/DSEMICONDUCTOR TECHNICAL DATA2N6251High Voltage NPN Silicon PowerTransistors15 AMPEREPOWER TRANSISTOR. . . designed for high voltage inverters, switching regulators and line operatedNPN SILICONamplifier applications. Especially well suited for switching power supply applications.350 VOLTS High Voltage Breakdown Rating 175 WATTS
2n6249-2n6250-2n6251.pdf
2N6249 2N6250 2N6251HIGH VOLTAGE NPN SILICON POWER TRANSISTORSHIGH VOLTAGE NPN SILICON POWER TRANSISTORSThe 2N6249 2N6250 2N6251 are NPN silicon transistors in Jedec TO-3.They are designed for high voltage inverters, switching regulators and line operated amplifierapplications. Especially well suited for switching power supply applications. High Voltage Breakdown
2n6251t1.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA
Datasheet: 2N6235R , 2N624 , 2N6246 , 2N6247 , 2N6248 , 2N6249 , 2N625 , 2N6250 , 13009 , 2N6253 , 2N6254 , 2N6255 , 2N6256 , 2N6257 , 2N6258 , 2N6259 , 2N626 .
