2SC5259 Datasheet. Specs and Replacement

Type Designator: 2SC5259  📄📄 

SMD Transistor Code: MIR_MIO

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 7 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.015 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.4 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: 2-3F1A

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2SC5259 datasheet

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2SC5259

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2SC5259

SMD Type Transistors NPN Transistors 2SC5259 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=7V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto... See More ⇒

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2SC5259

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1... See More ⇒

 8.2. Size:180K  toshiba

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2SC5259

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1... See More ⇒

Detailed specifications: 2SC5246, 2SC5247, 2SC5252, 2SC5254, 2SC5255, 2SC5256, 2SC5257, 2SC5258, TIP35C, 2SC5260, 2SC5261, 2SC5262, 2SC5263, 2SC5264LS, 2SC5265, 2SC5270, 2SC5270A

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