2SC5261 Datasheet and Replacement

   Type Designator: 2SC5261
   SMD Transistor Code: MI_MJ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 7 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: 2-2H1A

2SC5261 Substitution

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2SC5261 Datasheet (PDF)

..1. Size:182K toshiba
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0.1. Size:103K toshiba
2sc5261ft.pdf pdf_icon

8.1. Size:181K toshiba
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8.2. Size:164K toshiba
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8.3. Size:126K toshiba
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8.4. Size:220K toshiba
2sc5260.pdf pdf_icon

8.5. Size:103K toshiba
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8.6. Size:463K sanyo
2sc5264.pdf pdf_icon

Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :

8.7. Size:42K sanyo
2sc5264ls.pdf pdf_icon

Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe

8.8. Size:112K sanyo
2sc5265.pdf pdf_icon

Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55

8.9. Size:31K sanyo
2sc5265ls.pdf pdf_icon

Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector

8.10. Size:209K inchange semiconductor
2sc5265.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .