2SC5288 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5288
SMD Transistor Code: T89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC-61
2SC5288 Transistor Equivalent Substitute - Cross-Reference Search
2SC5288 Datasheet (PDF)
2sc5288.pdf
DATA SHEETSILICON TRANSISTOR2SC5288NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 24 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold
2sc5280.pdf
2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo
2sc5289.pdf
DATA SHEETSILICON TRANSISTOR2SC5289NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 27 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold
2sc5287.pdf
2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB
2sc5280.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC5280 DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (
2sc5287.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)
2sc5287.pdf
2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB
2sc5280.pdf
isc Silicon NPN Power Transistor 2SC5280DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high medium resolutiondisplay& color TV.High speed switching applications
2sc5287.pdf
isc Silicon NPN Power Transistor 2SC5287DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
