2SC5298 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5298
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO-3PML
2SC5298 Transistor Equivalent Substitute - Cross-Reference Search
2SC5298 Datasheet (PDF)
2sc5298.pdf
Ordering number:EN5292NPN Triple Diffused Planar Silicon Transistor2SC5298Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5298] Adoption of MBIT process.16.05.63.4 On-chip da
2sc5299.pdf
Ordering number:EN5293NPN Triple Diffused Planar Silicon Transistor2SC5299Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5299] Adoption of MBIT process.16.05.63.43.12.82.0
2sc5297.pdf
Ordering number:ENN5291NPN Triple Diffused Planar Silicon Transistor2SC5297Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5297] Adoption of MBIT process.16.05.63.43.12.82.0
2sc5291.pdf
Ordering number : ENN5282A2SC5291NPN Epitaxial Planar Silicon Transistor2SC5291High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping.[2SC5291] 9.5mm onboard mounting height.4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collecto
2sc5296.pdf
Ordering number:ENN5290ANPN Triple Diffused Planar Silicon Transistor2SC5296Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5296] Adoption of MBIT process.16.05.63.4 On-chip
2sc5295.pdf
Transistors2SC5295Silicon NPN epitaxial planer typeUnit: mmFor 2 GHz band low-noise amplification0.2+0.1 0.15+0.10.05 0.053 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2(0.5) (0.5)automatic insertion through the tape packing.1.00.11.60.15 Absolut
2sc5294.pdf
Power Transistors2SC5294, 2SC5294ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (Ta=
2sc5299.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5299 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso
2sc5297.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abs
2sc5296.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Em
2sc5299.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-
2sc5299.pdf
isc Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sc5297.pdf
isc Silicon NPN Power Transistor 2SC5297DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sc5296.pdf
isc Silicon NPN Power Transistor 2SC5296DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applicaitionsABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
