2SC5346 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5346
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: MT2
2SC5346 Transistor Equivalent Substitute - Cross-Reference Search
2SC5346 Datasheet (PDF)
2sc5346 e.pdf
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Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat
2sc5346.pdf
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Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat
2sc5347.pdf
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Ordering number:EN5512ANPN Epitaxial Planar Silicon Transistor2SC5347High-Frequency Semi-Power Output Stage,Low-Noise Medium Output Amplifiers ApplicationsFeatures Package Dimensions High frequency medium output amplificationunit:mm(VCE=5V, IC=50mA)2038A: fT=4.7GHz typ (f=1GHz).[2SC5347]2: S21e =8dB typ (f=1GHz).4.5: NF=1.8dB typ (f=1GHz). 1.51.60.4 0
2sc5347a.pdf
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Ordering number : ENA1087 2SC5347ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Semi-Power Output Stage,2SC5347ALow-Noise Medium Output Amplifier ApplicationsFeatures High-frequency medium output amplification(VCE=5V, IC=50mA): fT=4.7GHz typ (f=1GHz).:S21e2=8dB typ (f=1GHz).: NF=1.8dB typ (f=1GHz).SpecificationsAbsolute
2sc5347ae 2sc5347af.pdf
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Ordering number : ENA1087A2SC5347ARF Transistorhttp://onsemi.com12V, 150mA, fT=4.7GHz, NPN Single PCPFeatures High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : S21e =8dB typ (f=1GHz) 2 : NF=1.8dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag
2sc5345sf.pdf
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2SC5345SFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 2 SOT-23F Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code
2sc5343m.pdf
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2SC5343MNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980M TO-92M Ordering Information Type NO. Marking Package Code 2SC5343M 5343 TO-92MAbsolute maximum ratings Ta=25C Characte
2sc5343u.pdf
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2SC5343UNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 1 2 Complementary pair with 2SA1980U Ordering Information SOT-323 Type NO. Marking Package Code D 2SC5343U SOT-323 Device Code h
2sc5343e.pdf
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2SC5343ENPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 2 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980E SOT-523 Ordering Information Type NO. Marking Package Code C 2SC5343E SOT-523 Device
2sc5345uf.pdf
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2SC5345UFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : 2 Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response SOT-323F Ordering Information Type NO. Marking Package Code
2sc5344s.pdf
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2SC5344SNPN Silicon TransistorDescription Audio power amplifier application PIN Connection Features High hFE : hFE=100~320 Complementary pair with 2SA1981S C BOrdering Information Type No. Marking Package Code ESOT-23 FA 2SC5344S SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C) Char
2sc5343.pdf
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2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5343ef.pdf
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2SC5343EFNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980EF 2 SOT-523F Ordering Information Type NO. Marking Package Code C 2SC5343EF SOT-523F Devic
2sc5343-o.pdf
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2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5343sf.pdf
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2SC5343SFNPN Silicon TransistorDescription PIN Connection General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 2 Complementary pair with 2SA1980SF SOT-23F Ordering Information Type NO. Marking Package Code DA 2SC5343SF SOT-23F Device
2sc5342sf.pdf
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2SC5342SFNPN Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979SF SOT-23F Ordering Information Type NO. Marking Package Code BA 2SC5342SF SOT-23F Device Code
2sc5345m.pdf
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2SC5345MNPN Silicon TransistorDescription PIN Connection RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92M Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345M C5345
2sc5342s.pdf
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2SC5342SNPN Silicon TransistorMEDIUM POWER AMPLIFIER Features PIN Connection Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979S 3 12Ordering Information Type No. Marking Package Code BA 2SC5342S SOT-23 SOT-23 Device Code hFE Rank Year&Wee
2sc5343s.pdf
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2SC5343SNPN Silicon TransistorGENERAL SMALL SIGNAL AMPLIFIER Features PIN Connection Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980S C BOrdering Information E Type No. Marking Package Code SOT-23 DA 2SC5343S SOT-23 Device Code hFE Rank Year&Week
2sc5343-l.pdf
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2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5342uf.pdf
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2SC5342UFNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features 3 Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979UF SOT-323F Ordering Information Type NO. Marking Package Code 2SC5342UF B SOT-323F Device Code hF
2sc5342m.pdf
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2SC5342MNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979M TO-92M Ordering Information Type NO. Marking Package Code 2SC5342M 5342 TO-92M Absolute maximum ratings (Ta=25C) Character
2sc5342u.pdf
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2SC5342UNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features C Large collector current : IC=500mA B Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979U SOT-323 Ordering Information Type NO. Marking Package Code 2SC5342U B SOT-323 : hFE rank Absolute maximum ratings (
2sc5344.pdf
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2SC5344NPN Silicon TransistorDescription PIN Connection Audio power amplifier application CBFeatures High hFE : hFE=100~320 E Complementary pair with 2SA1981 TO-92 Ordering Information Type NO. Marking Package Code 2SC5344 C5344 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO 35 VCollect
2sc5342.pdf
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2SC5342NPN Silicon TransistorDescription PIN Connection Medium power amplifier CFeatures B Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979 TO-92 Ordering Information Type NO. Marking Package Code 2SC5342 C5342 TO-92 Absolute maximum ratings (Ta=25C) Cha
2sc5343-g.pdf
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2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5344u.pdf
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2SC5344UNPN Silicon TransistorDescription PIN Connection Audio power amplifier application Features 3 High hFE : hFE=100~320 Complementary pair with 2SA1981U 1 2Ordering Information SOT-323 Type NO. Marking Package Code F 2SC5344U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C)
2sc5345ef.pdf
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2SC5345EFSemiconductor Semiconductor NPN Silicon TransistorDescription RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345
2sc5343-y.pdf
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2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha
2sc5345.pdf
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2SC5345NPN Silicon TransistorDescription PIN Connection RF amplifier CFeatures High current transition frequency B fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : E Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92 Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5
2sc5343uf.pdf
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2SC5343UFSemiconductor Semiconductor NPN Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980UF Ordering Information Type NO. Marking Package Code D 2SC5343UF SOT-323F Device Code hFE Rank
2sc5344.pdf
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2SC5344 0.8A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Audio power amplifier application A High hFE=100~320 L3 Complementary to 2SA1981 3Top View C B11 22K ECLASSIFICATION OF hFE(1) DProduct-Rank 2SC5344-O 2SC5344-Y H JF GRange 100
2sc5345.pdf
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2SC5345 0.02A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE RF amplifier AL High current transition frequency fT=550MHz(Typ.), 33[VCE=6V, IE=-1mA] Top ViewC B Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 1 Low base time constant and hig
2sc5343.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5343 TRANSISTOR (NPN)FEATURES Excellent hFE Linearity Low Noise1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V
2sc5344.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5344 TRANSISTOR (NPN)FEATURES1. BASE 2. EMITTER Audio power amplifier application3. COLLECTOR High hFE : hFE=100~320 Complementary to 2SA1981MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emit
2sc5343.pdf
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2SC5343 TRANSISTOR (NPN)SOT-23 FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units2. EMITTER VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 150 mABase Current -Continuous Ib 50 mA
2sc5345.pdf
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2SC5345TRANSISTOR (NPN)FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance : 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Va
2sc5343.pdf
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2SC5343(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V Dimensions in inches and
2sc5344.pdf
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2SC5344(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 30 V VEBO Emit
2sc5345.pdf
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2SC5345 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Dimensions in inches and (millimeters) Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25
2sc5343 sot-23.pdf
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2SC5343 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V V
2sc5344.pdf
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2SC5344NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t
l2sc5343qlt1g.pdf
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LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesS-L2SC5343QLT1GNPN SiliconFEATURE Series Excellent hFE linearity 3:hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements.SOT 23 S- Prefix for Automotive a
l2sc5343rlt1g.pdf
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LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesNPN SiliconS-L2SC5343QLT1GFEATURE SeriesExcellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic
l2sc5343slt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC5343QLT1GNPN Silicon SeriesS-L2SC5343QLT1GFEATURE Excellent hFE linearity Series:hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise:NF=1Db(Typ).at f=1KHz. 12 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli
2sc5344sf.pdf
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SMD Type TransistorsNPN Transistors2SC5344SFSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High hFE : hFE=100~320 Complementary pair with 2SA1981SF1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter
2sc5342uf.pdf
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SMD Type TransistorsNPN Transistors2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary to 2SA1979UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter -
2sc5343uf.pdf
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SMD Type TransistorsNPN Transistors2SC5343UF Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary to 2SA1980UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .