2SC5445 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5445
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.7 MHz
Collector Capacitance (Cc): 290 pF
Forward Current Transfer Ratio (hFE), MIN: 4.5
Noise Figure, dB: -
Package: 2-21F2A
2SC5445 Transistor Equivalent Substitute - Cross-Reference Search
2SC5445 Datasheet (PDF)
2sc5445.pdf
2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5446.pdf
2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5443.pdf
Ordering number:EN6101NPN Triple Diffused Planar Silicon Transistor2SC5443Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5443] Adoption of MBIT process.20.03.35.02.03.40.6
2sc5444.pdf
Ordering number:EN6102NPN Triple Diffused Planar Silicon Transistor2SC5444Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5444] Adoption of MBIT process.20.03.35.02.03.40.6
2sc5440.pdf
Power Transistors2SC54402SC54402SC54402SC54402SC5440Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3 3.20.1For horizontal deflection output55 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5(4.0) High-speed switching52.00.2 Wide area of safe operation (ASO)1.
2sc5449.pdf
2SC5449Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-578 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5449Absolute Maximum Ratings (Ta = 25C)
2sc5448.pdf
2SC5448Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-577 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5448Absolute Maximum Ratings (Ta = 25C)
2sc5447.pdf
2SC5447Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-576 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCES = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFMC21B1. Base32. CollectorE13. Emitter232SC5447Absolute Maximum Rat
2sc5449.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5449DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BDY37A
