2SC5448 Datasheet PDF and Equivalents Search

 ..1. Size:45K  hitachi

 2sc5448.pdf

2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-577 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5448 Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

 8.1. Size:343K  toshiba

 2sc5445.pdf

2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT ... See More ⇒

 8.2. Size:340K  toshiba

 2sc5446.pdf

2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT ... See More ⇒

 8.3. Size:42K  sanyo

 2sc5443.pdf

Ordering number EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 ... See More ⇒

 8.4. Size:42K  sanyo

 2sc5444.pdf

Ordering number EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5444] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 ... See More ⇒

 8.5. Size:60K  panasonic

 2sc5440.pdf

Power Transistors 2SC5440 2SC5440 2SC5440 2SC5440 2SC5440 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 For horizontal deflection output 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 (4.0) High-speed switching 5 2.0 0.2 Wide area of safe operation (ASO) 1.... See More ⇒

 8.6. Size:45K  hitachi

 2sc5449.pdf

2SC5449 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-578 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5449 Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

 8.7. Size:46K  hitachi

 2sc5447.pdf

2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM C 2 1 B 1. Base 3 2. Collector E 1 3. Emitter 2 3 2SC5447 Absolute Maximum Rat... See More ⇒

 8.8. Size:188K  inchange semiconductor

 2sc5449.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5449 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒