2SC5450 Datasheet and Replacement

Ordering number:EN5955NPN Triple Diffused Planar Silicon Transistor2SC5450Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5450] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

isc Silicon NPN Power Transistor 2SC5450DESCRIPTIONHigh Breakdown Voltage-: V = 1600V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times: tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings

Ordering number:EN5957ANPN Triple Diffused Planar Silicon Transistor2SC5452Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5452] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number:EN5958NPN Triple Diffused Planar Silicon Transistor2SC5453Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5453] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base

Ordering number:EN5956NPN Triple Diffused Planar Silicon Transistor2SC5451Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5451] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5455NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications+0.22.8 0.3+0.2 High gain, low noise1.5 0.1 Small reverse transfer capacitance Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector t

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5454NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise+0.22.8 0.3+0.2 Small reverse transfer capacitance1.5 0.1 Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector to Base Voltage VCBO 9V5 5Collector

Power Transistors2SC5457Silicon NPN triple diffusion planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For high breakdown voltage high-speed switching4.35 0.10.5 0.1Features1.0 0.10.1 0.050.93 0.1High-speed switching0.5 0.10.75 0.1High collector to base voltage VCBO2.3 0.1 4.6 0.1Wide area of safe operation (ASO)Satisfactory linearity of f