2SC5453 PDF and Equivalents Search

Ordering number EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5453] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base ... See More ⇒

... See More ⇒

2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings ... See More ⇒

Ordering number EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5452] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 ... See More ⇒

Ordering number EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5450] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 ... See More ⇒

Ordering number EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5451] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 ... See More ⇒

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications +0.2 2.8 0.3 +0.2 High gain, low noise 1.5 0.1 Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector t... See More ⇒

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise +0.2 2.8 0.3 +0.2 Small reverse transfer capacitance 1.5 0.1 Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V 5 5 Collector... See More ⇒

Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For high breakdown voltage high-speed switching 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 High-speed switching 0.5 0.1 0.75 0.1 High collector to base voltage VCBO 2.3 0.1 4.6 0.1 Wide area of safe operation (ASO) Satisfactory linearity of f... See More ⇒

isc Silicon NPN Power Transistor 2SC5450 DESCRIPTION High Breakdown Voltage- V = 1600V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒