2SC5477 Datasheet and Replacement

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

SMD Type TransistorsNPN Transistors2SC5477SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

Ordering number:EN6069NPN Epitaxial Planar Silicon Darlington Transistor2SC547685V/3A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC5476]Features4.510.02.8 High DC current gain.3.2 Large current capacity and wide ASO. Contains a Zener d

Transistor2SC5472 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1High gain of 8.2dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.2S-Mini type package, allowing downsizing of the equipment anda

Transistor2SC5473 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.10 0.425FeaturesHigh transition frequency fT.High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone andpager.S-Mini type package, allowing downsizing of the equipment andautomatic

Transistor2SC5473 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.10 0.425FeaturesHigh transition frequency fT.High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone andpager.S-Mini type package, allowing downsizing of the equipment andautomatic

Transistor2SC5474 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT. 1High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.SS-Mini type package, allowing downsizing of the equipment2and aut

Power Transistors2SC5478Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistors2SC5472Silicon NPN epitaxial planer typeUnit: mmFor low-voltage low-noise high-frequency oscillation0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT High gain of 8.2 dB and low noise of 1.8 dB at 3 V1 2 Optimum for RF amplification of a portable telephone and pager(0.65) (0.65) S-mini type package, allowing downsizing of

Transistor2SC5474 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT. 1High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.SS-Mini type package, allowing downsizing of the equipment2and aut

2SC5470Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputADE-208-672 (Z)1st. EditionOct. 1, 1998Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec(typ.) at fH=64kHzOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5470Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector