2SC5505 Datasheet. Specs and Replacement
Type Designator: 2SC5505 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO-220D-A1
- BJT ⓘ Cross-Reference Search
2SC5505 datasheet
..1. Size:72K panasonic
2sc5505.pdf 
Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching TO-220D built-in Excellent package with withstand voltage 5 kV guaranteed 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rating Unit Collector-bas... See More ⇒
8.1. Size:264K sanyo
2sc5501a.pdf
Ordering number ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=13dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Large allowable collector dissipation PC=500mW max. Specifications Abso... See More ⇒
8.2. Size:41K sanyo
2sc5506.pdf
Ordering number EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5506] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base ... See More ⇒
8.3. Size:48K sanyo
2sc5504.pdf
Ordering number ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2161 2 High gain S21e =11dB typ (f=1GHz). [2SC5504] High cutoff frequency fT=11GHz typ. Low voltage, low current operation. 0.65 0.65 (VC... See More ⇒
8.4. Size:45K sanyo
2sc5503.pdf
Ordering number ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =15dB typ (f=1GHz). 2161 High cutoff frequency fT=9.0GHz typ. [2SC5503] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter ... See More ⇒
8.5. Size:46K sanyo
2sc5501.pdf
Ordering number ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2161 High cutoff frequency fT=7GHz typ. [2SC5501] Large allowable collector dissipation PC=500mW max. 0.65 0.65 0.15 ... See More ⇒
8.6. Size:48K sanyo
2sc5502.pdf
Ordering number ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2161 High cutoff frequency fT=8GHz typ. [2SC5502] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter 2 Coll... See More ⇒
8.7. Size:76K nec
2sc5508.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 ... See More ⇒
8.8. Size:91K nec
2sc5507.pdf
PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA ... See More ⇒
8.9. Size:35K nec
ne661m04 2sc5507.pdf
PRELIMINARY DATA SHEET NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH fT = 25 GHz HIGH POWER GAIN IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRI... See More ⇒
8.10. Size:81K nec
2sc5509.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA... See More ⇒
8.11. Size:236K onsemi
2sc5501a-4-tr-e.pdf
Ordering number ENA1061A 2SC5501A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =13dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Large allowable collector dissipation PC=500mW max Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ra... See More ⇒
Detailed specifications: 2SC5488, 2SC5489, 2SC5490, 2SC5497, 2SC5501, 2SC5502, 2SC5503, 2SC5504, 13005, 2SC5506, 2SC5507, 2SC5508, 2SC5509, 2SC5513, 2SC5514, 2SC5515, 2SC5516
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