2SC5505 Datasheet and Replacement

Power Transistors2SC5505Silicon NPN epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High-speed switching TO-220D built-in: Excellent package with withstand voltage 5 kVguaranteed1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol Rating UnitCollector-bas

Ordering number : ENA1061 2SC5501ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5501AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Large allowable collector dissipation : PC=500mW max.SpecificationsAbso

Ordering number:EN6070NPN Triple Diffused Planar Silicon Transistor2SC5506Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5506] Adoption of MBIT process.20.03.35.02.03.40.61.21 : Base

Ordering number:ENN6223NPN Epitaxial Planar Silicon Transistor2SC5504UHF to S Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21612 High gain : S21e =11dB typ (f=1GHz).[2SC5504] High cutoff frequency : fT=11GHz typ. Low voltage, low current operation.0.65 0.65(VC

Ordering number:ENN6222NPN Epitaxial Planar Silicon Transistor2SC5503VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =15dB typ (f=1GHz).2161 High cutoff frequency : fT=9.0GHz typ.[2SC5503]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter

Ordering number:ENN6221NPN Epitaxial Planar Silicon Transistor2SC5501VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2161 High cutoff frequency : fT=7GHz typ.[2SC5501] Large allowable collector dissipation :PC=500mW max.0.65 0.650.15

Ordering number:ENN6279NPN Epitaxial Planar Silicon Transistor2SC5502High-Frequency Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2161 High cutoff frequency : fT=8GHz typ.[2SC5502]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 : Coll

DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2

PRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5507NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

PRELIMINARY DATA SHEETNPN SILICON HIGHNE661M04FREQUENCY TRANSISTORFEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of just 0.59 mm.Flat Lead Style for better RF performance.DESCRI

DATA SHEETNPN SILICON RF TRANSISTOR2SC5509NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA

Ordering number : ENA1061A2SC5501ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCP4Features Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW maxSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra