All Transistors. 2SC5519 Datasheet

 

2SC5519 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC5519
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TOP-3E

 2SC5519 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5519 Datasheet (PDF)

 ..1. Size:47K  panasonic
2sc5519.pdf

2SC5519
2SC5519

Power Transistors2SC55192SC55192SC55192SC55192SC5519Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3For horizontal deflection output 3.20.155 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.

 8.1. Size:51K  rohm
2sc5511.pdf

2SC5519

2SC5511TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(160V, 1.5A)2SC5511 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = 160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SA2005.1.21.3

 8.2. Size:35K  panasonic
2sc5514.pdf

2SC5519
2SC5519

Power Transistors2SC5514Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.3. Size:35K  panasonic
2sc5515.pdf

2SC5519
2SC5519

Power Transistors2SC5515Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.4. Size:35K  panasonic
2sc5513.pdf

2SC5519
2SC5519

Power Transistors2SC5513Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.5. Size:35K  panasonic
2sc5516.pdf

2SC5519
2SC5519

Power Transistors2SC5516Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.6. Size:35K  panasonic
2sc5518.pdf

2SC5519
2SC5519

Power Transistors2SC5518Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.7. Size:35K  panasonic
2sc5517.pdf

2SC5519
2SC5519

Power Transistors2SC5517Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 8.8. Size:187K  inchange semiconductor
2sc5516.pdf

2SC5519
2SC5519

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5516DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.9. Size:179K  inchange semiconductor
2sc5517.pdf

2SC5519
2SC5519

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5517DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsAB

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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